Silevo’s Triex solar cell is a unique and proprietary device based on tunneling junction architecture that couples tunneling oxide layers used in the semiconductor industry with more traditional thin film passivation layers, enabling a device with extremely low interface trap densities (Dit). This hybrid of N-type crystalline substrate, thin film passivation and semiconductor oxide in the tunneling junction architecture uniquely yields the benefits of all three materials.
The Triex cell’s tunneling oxide layer coupled with thin film passivation is the key to excellent junction quality and high Voc – the foundation for low temperature coefficients. Only Silevo’s proprietary approach with the Triex cell offers thin film-like low temperature coefficients coupled with high-end efficiency performance at standard test conditions. This advanced cell architecture coupled with traditional c-Si package techniques enables the solar industry’s best value and performance, with future projections of 24% efficiency in coming years.
History of the Triex Cell
Silevo’s Triex cell is a descendent of the Metal Insulated Semiconductor (MIS) solar cell of the 1970s when distinguished scientists, such as Martin Greene from the University of New South Wales, published work on the potential advantages of employing a tunneling oxide layer coupled with an inversion layer and traditional SiN passivation to evoke a p-n junction. At the time, MIS cells set world records for open circuit voltage of 655mV and demonstrated 17.6% efficiency, and simulations showed that efficiencies as high as 23% could be achieved. However, MIS cells faced significant commercialization challenges and were not widely adopted by the market.
Early Ancestory of Tunneling Junction Cell
The Triex Cell Difference